Lklab Korea Silicon Wafer/실리콘 웨이퍼

■ Dia는 4인치 / 6인치 / 8인치 / 12인치로 구분 (Dia 크기에 따라 두께 증가)
■ Dopant Type은 P-type, N-type으로 구분
■ Grade는 Prime Grade, Test Grade로 구분
■ QL, SK실트론

● Dia 구분
▶ 4인치 / 6인치 / 8인치 / 12인치
▶ 현재 대세는 12인치 이상 (한번에 더 많은 반도체 생산을 위해)
▶ Dia 크기에 따라 두께 증가 (하단 표 참조)

● Dopant(Impurity(불순물) Doping 으로 전기적 특성을 부여) Type 구분
▶ P(Positive)-Type
◆ 3가 원소(B, Al, Ga) Doping으로 특성을 변화시킴
◆ 원자가 전하 운반자임

▶ N(Negative)-Type
◆ 5가 원소(P, As, Sb) Doping으로 특성을 변화시킴
◆ 전자가 전하 운반자임

● 저항 (Ω)
▶ Impurity Doping 양이 증가하면 저항이 낮아짐

● Orientation : 1-0-0
▶ 절단으로 결정 평면을 나타냄
▶ 최근에는 절단 보다는 표시로 결정 평면을 나타냄
▶ 이온 주입 방향을 선택

● Grade
▶ Prime Grade
◆ 고품질 광택 처리
◆ Photolithography (Mask 상에 설계된 패턴을 웨이퍼 상에 구현하는 공정) 와 particle monitors 에 사용
◆ 일반적으로 더 정확한 저항률 값으로 하이테크 프로젝트 또는 반도체 제조에 사용됨

▶ Test Grade
◆ 대량의 웨이퍼가 필요한 장비 테스트 및 지속적인 사용되는 곳 등에 쓰임
◆ 반도체 제조 라인 및 프로세스 제어 테스트 및 관리에 사용
◆ Test Grade는 Prime Grade 에서 보통 1개 이상의 규격이 부족

● Thermal Oxidation
▶ 고온에서 Silicon Wafer 를 산화시켜 SiO2 절연막을 성장시키는 공정
▶ 장점 : 계면상태 양호, 박막형성 용이, 물리적성질 우수

● Dry Type Thermal Oxidation

● QL, SK실트론

• Silicon Wafer / 실리콘 웨이퍼

Cat. No.	Model	Dia. (inch)	Type	Thickness (um)	Resistivity (ohm)	Polishing Surface	Orientation	Grade
W04-171-601	SW4P005P	4	P	500-550	<0.005	Single Side	1-0-0	PRIME
---	---	---	---	---	---	---	---	---
W04-171-604	SW4N005P	N
---	---	---	---	---	---	---	---	---
W04-171-607	SW4P300T	P	1~30	TEST
---	---	---	---	---	---	---	---	---
W04-171-610	SW4P100P	1~10	PRIME
---	---	---	---	---	---	---	---	---
W04-171-613	SW4N100P	N
---	---	---	---	---	---	---	---	---
W04-171-621	SW6P005P	6	P	650-700	<0.005
---	---	---	---	---	---	---	---	---
W04-171-624	SW6N005P	N
---	---	---	---	---	---	---	---	---
W04-171-627	SW6P015P	P	0.01~0.02
---	---	---	---	---	---	---	---	---
W04-171-630	SW6N015P	N
---	---	---	---	---	---	---	---	---
W04-171-633	SW6P100P	P	1~10
---	---	---	---	---	---	---	---	---
W04-171-636	SW6N100P	N
---	---	---	---	---	---	---	---	---
W04-171-639	SW6P300T	P	1~30	TEST
---	---	---	---	---	---	---	---	---
W04-171-642	SW6N300T	N
---	---	---	---	---	---	---	---	---
W04-171-651	SW8P005P	8	P	700-750	<0.005	PRIME
---	---	---	---	---	---	---	---	---
W04-171-654	SW8P500T	1-50	TEST
---	---	---	---	---	---	---	---	---
W04-171-661	SW12P500TD	12	Double Side
---	---	---	---	---	---	---	---	---

• Silicon Wafer, SiO2 / 산화막 증착 실리콘 웨이퍼

Cat. No.	Model	Dia. (inch)	Type	Thickness (um)	Resistivity (ohm)	Polishing Surface	Orientation	Grade	Thermal Oxidation
W04-171-701	SSW4P1000P	4	P	500-550	<0.005	Single Side	1-0-0	PRIME	1000A(=100nm)
---	---	---	---	---	---	---	---	---	---
W04-171-704	SSW4P2000P	2000A(=100~200nm)
---	---	---	---	---	---	---	---	---	---
W04-171-707	SSW4P3000P	3000A(=200~300nm)
---	---	---	---	---	---	---	---	---	---
W04-171-710	SSW4N1000P	N	1000A(=100nm)
---	---	---	---	---	---	---	---	---	---
W04-171-713	SSW4N2000P	2000A(=100~200nm)
---	---	---	---	---	---	---	---	---	---
W04-171-716	SSW4N3000P	3000A(=200~300nm)
---	---	---	---	---	---	---	---	---	---
W04-171-721	SSW6N1000P	6	P	650-700	1000A(=100nm)
---	---	---	---	---	---	---	---	---	---
W04-171-724	SSW6N2000P	2000A(=100~200nm)
---	---	---	---	---	---	---	---	---	---
W04-171-727	SSW6N3000P	3000A(=200~300nm)
---	---	---	---	---	---	---	---	---	---
W04-171-730	SSW6N1000P	N	1000A(=100nm)
---	---	---	---	---	---	---	---	---	---
W04-171-733	SSW6N2000P	2000A(=100~200nm)
---	---	---	---	---	---	---	---	---	---
W04-171-736	SSW6N3000P	3000A(=200~300nm)
---	---	---	---	---	---	---	---	---	---
W04-171-741	SSW8N005P	8	P	700-750	1000A ~ 2um
---	---	---	---	---	---	---	---	---	---
W04-171-744	SSW8N500T	1-50	TEST
---	---	---	---	---	---	---	---	---	---
W04-171-751	SSW12N1000TD	12	750-800	1-100	Double Side
---	---	---	---	---	---	---	---	---	---

● Silicon Wafer, SiO2는 주문 시, Thermal Oxidation 범위 내에서 선택해야함